A universal analytic charge injection model

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Jan 2000Publisher:IEEEJournal:2000 IEEE International Symposium on Circuits and Systems (ISCAS)

Authors: Yongwang Ding; Ramesh Harjani;

doi: 10.1109/iscas.2000.857047

A universal analytic charge injection model

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Abstract

In this paper we present an analytical model for charge injection in MOS switches that is valid for all regions of operation. The model is general and can be applied for different load conditions. We analyze and develop two separate charge injection models for the different operating conditions. A simple continuous model that is valid for all conditions is then stitched together using appropriate functions. Simulation results from this model agree well with previously published measurement results. The model is used to predict charge injection error and nonlinearity.

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