Tunable Holding-Voltage High Voltage ESD Devices

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Mar 2019Publisher:IEEEJournal:2019 IEEE International Reliability Physics Symposium (IRPS)

Authors: Jian-Hsing Lee; Natarajan Mahadeva Iyer;

doi: 10.1109/irps.2019.8720522

Tunable Holding-Voltage High Voltage ESD Devices

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Abstract

Physical understanding of the interaction of junction depth and the location of different Drain-side N-type implants on the holding-voltage of LDNMOS is presented. Using N-type well implants to modulate the junction depth, width and doping concentration results in change of the holding-voltage of LDMOS since the drain potential is a function of position in two dimensions.

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