Approximations to field-effect factor and their use in GIDL modeling

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2011Publisher:IEEEJournal:18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Authors: Nikita Kozhukhov; null Byoungchan Oh; null Hyungcheol Shin;

doi: 10.1109/ipfa.2011.5992740

Approximations to field-effect factor and their use in GIDL modeling

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Abstract

New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design.

Related Organizations

Seoul National University
Korea (Republic of)
University B.D.T College of Engineering
India

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