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Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

Authors: Zexuan Zhang; Shaofeng Guo; Xiaobo Jiang; Runsheng Wang; Ru Huang; Jibin Zou;

Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

Abstract

In this paper, the amplitude (ΔI d /I d ) distribution of random telegraph noise (RTN) induced by each trap in nanoscale devices is investigated based on the statistical experimental results. The RTN states are extracted through the proposed Gaussian mixture model (GMM). Mont-Carlo simulation is performed to extract the most probable results for mean trap number and each RTN amplitude. The results show that the RTN amplitude distribution is well consistent with the lognormal distribution instead of the exponential distribution for both the DC and AC results, which is helpful for future robust digital circuit design against RTN.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
7
Average
Average
Top 10%
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