A monolithic low-noise-amplifier operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 mum SiGe BiCMOS technology, featuring npn transistors with fT and fmax ap 200 GHz. A two stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a gain of 18 dB at 61 GHz, which compare reasonably the simulated results. The circuit consumes 7.5 mA from a 2.7 V supply and active chip area is 0.45 mm2.