Comparison of non-linear MESFET models

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 25 Jun 2003Publisher:IEEEJournal:9th International Conference on Electronics, Circuits and Systems, volume 3, pages 1,187-1,190

Authors: Edin Sijercic; Branimir Pejcinovic;

doi: 10.1109/icecs.2002.1046465

Comparison of non-linear MESFET models

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Abstract

The objective of this paper is to investigate the non-linear performance of some of the most widely used GaAs MESFET models. DC, AC and intermodulation (IMD) measurements were carried out on 300 /spl mu/m devices, and equivalent circuit parameters were extracted and optimized. Model predictions of IMD were investigated through several figures of merit: gain, IMD3, IMD5, compression points and intercept points. No clear cut "winner" among the models was observed, but Statz and Advanced Materka have the best overall performance.

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Portland State University
United States

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