This paper investigates the temperature influence on Ultra Thin Buried Oxide (UTBOX) FDSOI devices used as a 1T-DRAM (single transistor dynamic random access memory cell) using GIDL (Gate Induced Drain Leakage) for writing operation through numerical simulations. At higher temperatures, it is observed that the memory window varies and the retention time is degraded, when using a standard read. To solve this issue, we suggest the ZTC read, which fixes the state-0 current independently of the temperature. Moreover, considering I 0 current as a reference current for the memory cell operation results in improved retention time.