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Article
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https://doi.org/10.1109/iccdcs...
Article . 2003 . Peer-reviewed
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https://dx.doi.org/10.1109/icc...
Article
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Applying device simulation for lifetime-controlled devices

descriptionPublicationkeyboard_double_arrow_right Article 25 Jun 2003Publisher:IEEEJournal:Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)
Authors: R. Siemieniec; W. Sudkamp; J. Lutz;

doi: 10.1109/iccdcs.2002.1004041

Applying device simulation for lifetime-controlled devices

Abstract

Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.

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    popularity
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    		 Average
    influence
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    This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
3
Average
Top 10%
Average