The main purpose of the work is modelling and determination of electrical parameters of Schottky contacts using their Voltage-Current Characteristics. In this case a model of a uniform is normally used within a forward bias values less than 10 V. For non-uniform metal-semiconductor contacts we have proposed and used the more complicated method of parameters calculations. The experiments have been carried out with use of Schottky diodes samples on the basis of n-Si / Mo contacts that have a contact area square of about 6 mm2. Some main parameters have been calculated using the method of Newton and EXCEL. The consequence of the modelling process has been described both for a forward and reverse biases. The simulation results have been compared with results obtained with the other modeling methods and with the experimental data. For instance the Schottky barrier height has been determined as 0,648 V and the transmitting layer thickness - as 0,614 nm for the samples. It is shown that the proposed method of modelling for the case of non-uniform Schottky contacts provides better accuracy than the others and allows calculating a transmitting dielectric layer thickness.