
By the analysis of the sensing mechanism of ISFET, A HSPICE behavioral model of a floating-gate ISFET is built based on the site-binding model. Its static input-output characteristics are simulated and the relationship between the membrane resistance, membrane capacitance, interconnection line parasitic capacitance and the dynamic characteristics of the response delay and hysteresis is investigated. The results provide theoretical references for the design of the chips in an ISFET/ REFET differential integrated sensor.
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