A single event latchup protection switch (SPS) has been developed in the IHP 250 nm bulk CMOS technology. The SPS has been designed as a standard library cell intended for implementation in the radiation-tolerant application specific integrated circuits (ASICs). It provides detection of single event latchup and subsequent shut-down of power supply to critical elements within the chip to restore the normal operation. However, the SPS cell might be also susceptible to single event transients. In that regard, this work presents the simulation-based analysis of the response of SPS cell in the case of single event transients. The dependence of the single event transient response with respect to the injected charge, supply voltage, load and sensing transistor's size has been analyzed.