Negative Bias Temperature Instability (NBTI) has become an important reliability issue in modern semiconductor processes. Recent work has attempted to address NBTI-induced degradation at the architecture level. However, such work has relied on device-level analytical models that, we argue, are limited in their flexibility to model the impact of architecture-level techniques on NBTI degradation. In this paper, we propose a flexible numerical model for NBTI degradation that can be adapted to better estimate the impact of architecture-level techniques on NBTI degradation. Our model is a numerical solution to the reaction-diffusion equations describing NBTI degradation that has been parameterized to model the impact of dynamic voltage scaling, averaging effects across logic paths, power gating, and activity management We use this model to understand the effectiveness of different classes of architecture-level techniques that have been proposed to mitigate the effects of NBTI. We show that the potential benefits from these techniques are, for the most part, smaller than what has been previously suggested, and that guardbanding may still be an efficient way to deal with aging.