Annealing and Shunting in RCE HgCdTe Photoconductors

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 2006Publisher:IEEEJournal:2006 Conference on Optoelectronic and Microelectronic Materials and Devices

Authors: Justin G. A. Wehner; Charles A. Musca; Richard H. Sewell; J. M. Dell; L. Faraone;

doi: 10.1109/commad.2006.4429880

Annealing and Shunting in RCE HgCdTe Photoconductors

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Abstract

Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Ex-situ annealing for 20 hours under a Hg atmosphere did not markedly degrade cavity performance, and resulted in much more uniform material. Responsivity measured on the ex-situ annealed material is low, and shows evidence of shunting of absorber layer by mirror layers.

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University of Western Australia
Australia

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