Analysis of architectural and circuit limitations onvoltage gain (Gain) of the classical stages with a common baseand a common emitter at a low-voltage supply are considered.It is also considered methods of improving voltage gain whichare based on the principles of their mutual compensationimpedances that have a negative impact on voltage gain. Themathematical conditions of presented methods are alsoconsidered. The paper consider problem of limiting voltagegain stage with a common base, method of the currentcompensation of the impedance of the collector load, method ofmutual compensation of the collector load impedance in thestages with a common base and method of increase voltagegain in stage with a common emitter. The considered featuresof the design of the compensation circuits show that this circuitsolution is quite promising on the SiGe process, in which thep-n-p transistors are not realized.