S-parameter simulation with a new MOSFET model
null Guoli Qu; A.E. Parker;
S-parameter simulation with a new MOSFET model
This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements.
- Macquarie University Australia
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
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