
This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
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