This paper describes a specific technique for measuring and characterizing the time-domain aspect of the crosstalk effect based on a sampling technique. It includes the description of the circuit implementation in 0.7 /spl mu/m technology and the measurements of the crosstalk between metallization tracks within the chip, with a 10 ps resolution and 10 mV precision. A comparison between the measurements and analog simulations based on a distributed RC model is also included. The key advantages of this technique are that it is totally integrated, fully static, and adaptable to any CMOS technology.