1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 1999Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 20, pages 428-430 (issn: 0741-3106, eissn: 1558-0563,

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Authors: F. Udrea; S.S.M. Chan; J. Thomson; T. Trajkovic; P.R. Waind; G.A.J. Amaratunga; D.E. Crees;

doi: 10.1109/55.778166

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

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Abstract

In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated devices. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.

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University of Cambridge
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