Effects of X-ray irradiation on GIDL in MOSFETs

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 1992Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 13, pages 189-191 (issn: 0741-3106, eissn: 1558-0563,

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Authors: A. Acovic; C.C.-H. Hsu; L.-C. Hsia; A. Balasinski; T.-P. Ma;

doi: 10.1109/55.145016

Effects of X-ray irradiation on GIDL in MOSFETs

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Abstract

The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFETs, a forming gas anneal at 400 degrees C completely removes all effects of irradiation on the GIDL. >

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