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IEEE Potentials
Article . 1989 . Peer-reviewed
License: IEEE Copyright
Data sources: Crossref
https://dx.doi.org/10.1109/45....
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Molecular beam epitaxy

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1989Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Potentials, volume 8, pages 18-22 (issn: 0278-6648, Copyright policy )
Authors: T.-Y. Yong;

doi: 10.1109/45.41532

Molecular beam epitaxy

Abstract

A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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