A compact IGFET model-ASIM

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 1988Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, volume 7, pages 952-975 (issn: 0278-0070, eissn: 1937-4151,

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Authors: Shiuh-Wuu Lee; Robert C. Rennick;

doi: 10.1109/43.7794

A compact IGFET model-ASIM

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Abstract

A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the terminals with that of detailed physical simulations and measurements. The results agreed well with that of two-dimensional device simulations and measurements. >

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