Perspective on BiCMOS VLSIs

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 1988Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Journal of Solid-State Circuits, volume 23, pages 5-11 (issn: 0018-9200, eissn: 1558-173X,

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Authors: Masaharu Kubo; Ikuro Masuda; Kenji Miyata; Katsumi Ogiue;

doi: 10.1109/4.249

Perspective on BiCMOS VLSIs

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Abstract

A high-performance BiCMOS technology (Hi-BiCMOS) and its applications to VLSIs are described. By combining bipolar and CMOS devices in unit circuits of VLSIs, Hi-BiCMOS provides both speed performance competitive with bipolar LSIs and integration density close to that of CMOS LSIs. Hi-BiCMOS technology has been successfully used for static RAMs, dynamic RAMs, and gate arrays. The effectiveness of its applications to some types of processors has also been examined by evaluating test chips. >

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Hitachi (Japan)
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