A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 2000Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Nuclear Science, volume 47, pages 2,521-2,527 (issn: 0018-9499, eissn: 1558-1578,

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Authors: S. Zhang; G. Niu; J.D. Cressler; S.J. Mathew; U. Gogineni; S.D. Clark; P. Zampardi; +1 Authors

doi: 10.1109/23.903802

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

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Abstract

A comparison of the effects of gamma irradiation on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and gallium-arsenide (GaAs) HBT technologies is reported, DC and radiofrequency (RF) performance as well as the low frequency noise are investigated for gamma doses up to 1 Mrad(Si). The results indicate that both SiGe and GaAs HBT technologies are tolerant to gamma irradiation.

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