Radiation-hardened microelectronics for accelerators

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 1988Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Nuclear Science, volume 35, pages 160-165 (issn: 0018-9499, eissn: 1558-1578,

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Authors: J.E. Gover; T.A. Fischer;

doi: 10.1109/23.12697

Radiation-hardened microelectronics for accelerators

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Abstract

Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments. >

Related Organizations

Sandia National Laboratories
United States
Sandia National Laboratories
United States

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