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IEEE Transactions on Electron Devices
Article . 1988 . Peer-reviewed
License: IEEE Copyright
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https://dx.doi.org/10.1109/16....
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Tunneling injection into modulation doping structures: a mechanism for negative differential resistance three-terminal high-speed devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 1988Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 35, pages 1,530-1,532 (issn: 0018-9383, eissn: 1557-9646, Copyright policy )
Authors: J.-P. Leburton; J. Kolodzey;

doi: 10.1109/16.2587

Tunneling injection into modulation doping structures: a mechanism for negative differential resistance three-terminal high-speed devices

Abstract

A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation. >

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
4
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