Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 1993Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 40, pages 1,183-1,185 (issn: 0018-9383,

Authors: D.L. Pulfrey; S. Searles;

doi: 10.1109/16.214752

Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

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Abstract

The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant. >

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