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doi: 10.1109/16.214752
The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant. >
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impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |