Cotunneling at Resonance for the Single-Electron Transistor
Copyright policy )Cotunneling at Resonance for the Single-Electron Transistor
We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.
5 pages, Revtex, 5 eps-figures
Condensed Matter - Mesoscale and Nanoscale Physics, Physics, ddc:530, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, info:eu-repo/classification/ddc/530, 530
Condensed Matter - Mesoscale and Nanoscale Physics, Physics, ddc:530, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, info:eu-repo/classification/ddc/530, 530
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