Observation of ballistic holes

descriptionPublicationkeyboard_double_arrow_right Article , Part of book or chapter of book 29 Feb 1988 English Publisher:American Physical Society (APS)Journal:Physical Review Letters, volume 60, pages 828-831 (issn: 0031-9007,

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Authors: , Heiblum; , Seo; , Meier; , Hickmott;

doi: 10.1103/physrevlett.60.828 , 10.1007/978-1-4757-0770-0_14

pmid: 10038663

Observation of ballistic holes

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Abstract

We report the first direct observation of ballistic hole transport in semiconductors, via energy spectroscopy experiments. Light holes are preselected and injected via tunnelling into 31 nm thick p+ GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.

Related Organizations

IBM Research – Thomas J. Watson Research Center
United States

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