Using a nonlocal pseudopotential, including spin-orbit interactions, we have calculated a band structure for GaAs which is in excellent agreement with electroreflectance, wave-length-modulation, and photoemission experimental results. As in a calculation by Pandey and Phillips, an order of magnitude in accuracy has been gained over existing band structures; the largest discrepancy with Schottky-barrier electroreflectance measurements is less than 0.08 eV. The ${E}_{0}^{\ensuremath{'}}$ conflict is resolved in favor of Aspnes's interpretation.