The rare-earth nitrides have recently regained attention due to findings that most members of the series are intrinsic ferromagnetic semiconductors, a class of materials that is crucial for the development of spintronics devices. Here we present a study of NdN thin films, with films grown via molecular beam epitaxy. Optical transmission measurements revealed a band gap of about 0.9 eV, while resistivity measurements confirmed semiconducting behavior with a negative temperature coefficient of resistance, though semimetallic behavior could not be ruled out. The room temperature resistivity of 0.$6\mathrm{m}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\mathrm{cm}$ indicates strong doping by nitrogen vacancies. Magnetization measurements show a ferromagnetic moment of $1.0\ifmmode\pm\else\textpm\fi{}0.2{\ensuremath{\mu}}_{B}$ below the Curie temperature ${T}_{C}$ of $43\ifmmode\pm\else\textpm\fi{}1$ K, strongly suppressed from the Hund's rules value of $3.27{\ensuremath{\mu}}_{B}$ per ion. The ferromagnetic moment is strongly quenched and the ${T}_{C}$ is enhanced compared to previously studied bulk NdN, and crystal field calculations reveal that the quenched moment is likely due to lattice strain. X-ray magnetic circular dichroism measurements show that the magnetic moment is orbital dominant, placing NdN in the same category as SmN, an intrinsic ferromagnetic semiconductor with an orbital-dominant ferromagnetic moment.