Modulation doping of a Mott quantum well by a proximate polar discontinuity
Copyright policy )Modulation doping of a Mott quantum well by a proximate polar discontinuity
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.
16 pages, 7 figures
- University of Tokyo Japan
- Institute of Science Tokyo Japan
- Japan Science and Technology Agency Japan
Condensed Matter - Strongly Correlated Electrons, Strongly Correlated Electrons (cond-mat.str-el), FOS: Physical sciences
Condensed Matter - Strongly Correlated Electrons, Strongly Correlated Electrons (cond-mat.str-el), FOS: Physical sciences
selected citations These citations are derived from selected sources.This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).41 popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.Top 10% influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).Top 10% impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.Top 10%
Citations provided by BIP!Popularity provided by BIP!