Spin accumulation in the extrinsic spin Hall effect

descriptionPublicationkeyboard_double_arrow_right Article , Preprint 07 Dec 2005Embargo end date: 01 Aug 2005 Germany English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 72 (issn: 1098-0121, eissn: 1550-235X,

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Authors: Tse, Wang-Kong; Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das;

doi: 10.1103/physrevb.72.241303 , 10.48550/arxiv.cond-mat/0508076 , 10.5283/epub.1814

arXiv: cond-mat/0508076

Spin accumulation in the extrinsic spin Hall effect

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Abstract

The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.

5 pages, 3 figures

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Germany

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Keywords

Condensed Matter - Mesoscale and Nanoscale Physics, ddc:530, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, 530 Physik

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