It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths.

5 pages, 5 figures, to be published in Phys.Rev.B