Maximum metallic conductivity in Si-MOS structures
Copyright policy )Maximum metallic conductivity in Si-MOS structures
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.
3 pages, 3 ps-figs, RevTex, new data
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Mesoscale and Nanoscale Physics, Strongly Correlated Electrons (cond-mat.str-el), Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Mesoscale and Nanoscale Physics, Strongly Correlated Electrons (cond-mat.str-el), Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences
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