Segregation and diffusion on semiconductor surfaces

descriptionPublicationkeyboard_double_arrow_right Article 15 May 1996 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 53, pages 13,551-13,558 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Nützel; , Abstreiter;

doi: 10.1103/physrevb.53.13551

pmid: 9983102

Segregation and diffusion on semiconductor surfaces

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Abstract

The surface segregation of phosphorus, antimony, and boron in Si molecular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segregation model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of segregation on different semiconductor surfaces, explicitly: Si, Ge, and GaAs. \textcopyright{} 1996 The American Physical Society.

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Technical University of Munich
Germany
TECHNISCHE UNIVERSITAET MUENCHEN
Germany

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