Atomic structure of Ga and As atoms on GaAs(110)

descriptionPublicationkeyboard_double_arrow_right Article 15 Oct 1995 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 52, pages 10,733-10,736 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Yi; , Koo; , Lee; , Ha; , Lee;

doi: 10.1103/physrevb.52.10733

pmid: 9980156

Atomic structure of Ga and As atoms on GaAs(110)

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Abstract

Atomic structures of Ga and As atoms on GaAs(110) were examined employing a first-principles pseudopotential method. Both Ga and As atoms reside in the center of a triangle consisting of a surface Ga and two surface As atoms in the single-atom chemisorbed state. Adsorption energies for Ga and As atoms are 3.1 and 3.5 eV, respectively. Energy barrier heights of Ga and As atoms for the migration along the path through the interstitial channel were found to be 0.6 and 1.0 eV, respectively. Simulations on the deposition of two atoms reveal that a pair formation is stable against separate single-atom chemisorptions.

Related Organizations

Korea Research Institute of Standards and Science
Korea (Republic of)
Electronics and Telecommunications Research Institute
Korea (Republic of)

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