Strain and interdiffusion in semiconductor heterostructures
Copyright policy ) GILLIN, WP; DUNSTAN, DJ;
Strain and interdiffusion in semiconductor heterostructures
It is often suggested that the rate of interdiffusion at semiconductor heterostructure interfaces may be strongly dependent on elastic strain in the structure. Experimental and theoretical results show that strain does not, and should not, affect interdiffusion.
United Kingdom
- Queen Mary University of London United Kingdom
- University of Surrey United Kingdom
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selected citations
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
Citations provided by BIP!popularityPopularity provided by BIP!
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
Popularity provided by BIP! 40
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Top 10%
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