Intrinsic noise of the single-electron transistor

descriptionPublicationkeyboard_double_arrow_right Article 15 Apr 1994 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 49, pages 10,381-10,392 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Korotkov;

doi: 10.1103/physrevb.49.10381

pmid: 10009861

Intrinsic noise of the single-electron transistor

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Abstract

The paper is devoted to calculation of the ``classical'' (thermal and/or shot) intrinsic noise of the single-electron transistor (SET) caused by the stochastic character of electron tunneling. Exact solution of the master equation describing the dynamics of the SET is obtained in the frequency representation. The low-frequency limit for the spectral calculations is considered in detail.

Related Organizations

Lomonosov Moscow State University
Russian Federation
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State University of New York at Potsdam
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