Indirect photoreflectance from high-electron-mobility transistor structures

descriptionPublicationkeyboard_double_arrow_right Article 15 Jun 1992 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 45, pages 13,796-13,798 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Sydor; , Engholm; , Manasreh; , Evans; , Stutz; , Mitchel;

doi: 10.1103/physrevb.45.13796

pmid: 10001488

Indirect photoreflectance from high-electron-mobility transistor structures

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Abstract

Photoreflectance in sample regions shaded from laser pump illumination reveals a low-level signal attributable to modulation of the two-dimensional electron gas in GaAs/Al x Ga 1−x As high-electron-mobility transistor structures. Samples with 2-9×10 5 -cm 2 /Vs electron mobility (at 4 K) display photoreflectance ΔR/R∼5×10 −6 at distances up to 3 mm away from the modulated area of the sample. A rotationlike behavior of the GaAs signature in the 0-1.5-mm region reveals the presence of multiple modulation mechanisms whose lateral ranges differ with temperature and electron mobility

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