
pmid: 9997895
Determination des expressions analytiques de l'energie de l'etat fondamental et de la 1ere sous-bande d'une heterojonction en fonction de la temperature et de la concentration en electrons. La difference d'energie E 10 entre la premiere sous-bande et l'etat fondamental est en accord raisonnable avec les donnees obtenues dans une heterojonction GaAs-Ga 1−x Al x As
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