Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs

descriptionPublicationkeyboard_double_arrow_right Article 15 Jan 1990 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 41, pages 1,461-1,478 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Fasol; , Hackenberg; , Hughes; , Ploog; , Bauser; , Kano;

doi: 10.1103/physrevb.41.1461

pmid: 9993863

Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs

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Abstract

Cette spectroscopie fournit des informations sur la structure de bande, sur les vitesses de diffusion electron-phonon, electron-electron, et intervallee, ainsi que sur les niveaux d'impuretes aux minima des bandes de conduction elevees dans des semiconducteurs de composes III-V

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