Hole magnetoplasmons in semiconductor heterostructures

descriptionPublicationkeyboard_double_arrow_right Article 15 Jan 1990 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 41, pages 1,294-1,297 (issn: 0163-1829, eissn: 1095-3795,

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Authors: , Yang; , MacDonald;

doi: 10.1103/physrevb.41.1294

pmid: 9993844

Hole magnetoplasmons in semiconductor heterostructures

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Abstract

La dispersion du magnetoplasmon de trou des heterostructures GaAs/Al x Ga 1−x As est calculee par l'approximation de Hartree-Fock dependante du temps. Les positions des resonances de cyclotron sont nettement deplacees par les interactions trou-trou. La dispersion du magnetoplasmon de trou augmente de facon monotone avec le vecteur d'onde

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