Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate

descriptionPublicationkeyboard_double_arrow_right Article 15 Oct 1986 English Publisher:American Physical Society (APS)Journal:Physical Review B, volume 34, pages 5,377-5,380 (issn: 0163-1829,

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Authors: , Hillebrecht; , Ronay; , Rieger; , Himpsel;

doi: 10.1103/physrevb.34.5377

pmid: 9940370

Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate

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Abstract

The oxidation of Si(100) surfaces covered with 3 A Ce was studied by high-resolution photoemission spectroscopy. The oxygen uptake was found to be enhanced by orders of magnitude by the presence of Ce. Because of chemical reaction between Ce and Si, a mixed oxide with a Ce:Si:O composition ratio of 1:1:3 is formed. The sharp photoemission spectra of this oxide indicate the formation of a well-defined compound in which both Ce and Si are in a 3+ oxidation state.

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