The existence of a nonvanishing Hall effect in the "impurity conduction" regime of a semiconductor is demonstrated. In this regime (prevalent at low temperatures and at low impurity concentrations) the dominant electron transport mechanism is the phonon-induced hopping of charge carriers from occupied to unoccupied majority sites. The basic element of the theory is the existence of a (magnetic) field-dependent contribution to the jump probability between two sites. This contribution is computed and is shown to arise from the interference between the amplitude for a direct transition between the initial and final sites and the amplitude for an indirect, second-order transition, involving intermediate occupancy of a third site.