The time-dependent photoconductivity of copper-doped $n$-type and $p$-type germanium bridges has been measured between 130\ifmmode^\circ\else\textdegree\fi{}K and 293\ifmmode^\circ\else\textdegree\fi{}K. Temporary hole traps were found in the $n$-type samples at the lower temperatures but no traps were observed in the $p$ type. Trap concentrations agreed with the density of copper atoms to within a factor of two and were at least 100 times higher than undoped crystals. The trappings levels are 0.2 ev above the valence band; the capture cross section for holes, ${\ensuremath{\sigma}}_{p}$, is ${10}^{\ensuremath{-}16}$ ${\mathrm{cm}}^{\ensuremath{-}2}$ and independent of temperature while the capture cross section for electrons, ${\ensuremath{\sigma}}_{n}$, is temperature-dependent with an activation energy greater than 0.1 ev. As a result of this temperature dependence of ${\ensuremath{\sigma}}_{n}$, the 0.2-ev copper level changes from a recombination center at room temperature to a hole trap at lower temperatures.