We present a comprehensive benchmarking for spin-transfer torque (STT) and spin–orbit torque (SOT) based random-access memories. Based on experimentally validated micromagnetic simulations along with the use of rare event enhancement techniques, we show various tradeoffs among the write error rate, write time, and write current. We consider both in-plane and perpendicular devices. For SOT driven perpendicular devices, we include various write mechanisms, such as field-assisted, STT-assisted, and switching due to out-of-plane spin torque, usually present in low symmetry materials.