Linear magnetoresistance is a phenomenon observed in a few topological compounds originating from both classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields, on the YSi single crystal along all three principal crystallographic directions of the orthorhombic crystal structure. For the J∥[001]; B∥[100] direction above ≈10 T, mobility fluctuations driven linear magnetoresistance is observed without any sign of saturation up to the 14 T magnetic field. Anisotropy in the Fermi surface is imminent from the angular dependence of the magnetoresistance. Kohler rule violation is observed in this system, and Hall data signify multiple charge carriers in YSi.