Multi-probe scanning tunneling microscopy can play a role in various electrical measurements and characterization of nanoscale objects. The consistent close placement of multiple probes relies on very sharp apexes with no other interfering materials along the shank of the tip. Electrochemically etched tips can prepare very sharp apex tips; however, other asperities on the shank can cause interference and limit the close positioning of multiple tips to beyond the measured radii. Gallium focused ion beam (FIB) milling is used to remove any interfering material and allow closely spaced tips with a consistent yield. The tip apex radius is evaluated with field ion microscopy, and the probe spacing is evaluated with STM on hydrogen terminated silicon surfaces. FIB prepared tips can consistently achieve the measured probe to probe spacing distances of 25 nm–50 nm.