The technique described here provides scanning tunneling microscopy (STM) and atomic force microscopy (AFM) in one instrument. Both STM and AFM operations are accomplished by the same device applied to the same sample area. The same metallic probe interacts with the sample in both modes of operation. Switching from STM to AFM can occur automatically or on command. Images can be recorded separately or in several combined modes and directly compared. Electronic and geometric contributions are identifiable in the separate and combined images. Conductors, semiconductors, and insulators may be investigated. Representative images of each are shown.