Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices
Copyright policy ) E. K. Sichel; L. Greber; K. Wang;
Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices
The sign anomaly in the Hall coefficient observed in substitutionally doped amorphous Si:H and amorphous Ge:H is also found in amorphous Si:H/Ge:H superlattices. The size of the Hall mobility in the superlattice is comparable to the Hall mobility in amorphous Si:H and amorphous Ge:H.
- Massachusetts Institute of Technology United States
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
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